Light-induced metallization at the gallium-silica interface
Petropoulos, P., Kim, H.S., Richardson, D.J., Fedotov, V.A. and Zheludev, N.I. (2001) Light-induced metallization at the gallium-silica interface. Physical Review B, 64, (19), 193312-[4pp]. (doi:10.1103/PhysRevB.64.193312)
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Official URL: http://dx.doi.org/10.1103/PhysRevB.64.193312
Description/Abstract
Simultaneous measurements of the intensity and phase of a probe wave reflected from an interface between silica and elemental alpha -gallium reveal its very strong optical nonlinearity, affecting both these parameters of the reflected wave. The data corroborate with a nonthermal mechanism of optical response which assumes appearance of a homogeneous highly metallic layer, only a few nanometer thick, between the silica and bulk alpha -gallium.
| Item Type: | Article |
|---|---|
| ISSN: | 1098-0121 (print) |
| Related URLs: | http://dx.doi.org/10.1103/Phys....64.193312 |
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | University Structure - Pre August 2011 > Optoelectronics Research Centre |
| ePrint ID: | 13666 |
| Deposited On: | 07 Jan 2005 |
| Last Modified: | 01 Jun 2011 16:59 |
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