Increased photosensitivity of Ge-doped and Ge, Sn-doped fibres under high-intensity 264 nm laser light
Dragomir, A., Nikogosyan, D.N. and Brambilla, G. (2003) Increased photosensitivity of Ge-doped and Ge, Sn-doped fibres under high-intensity 264 nm laser light. Electronics Letters, 39, (20), 1437-1439.
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Description/Abstract
An enhanced photosensitivity was observed in 30 mol% Ge-doped fibre and 30 mol% Ge-doped, 1 mol% Sn-codoped fibre when exposed to high-intensity (73-86 GW/cm2) femtosecond laser pulses at 264 nm.
| Item Type: | Article |
|---|---|
| ISSNs: | 0013-5194 (print) |
| Related URLs: | |
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | University Structure - Pre August 2011 > Optoelectronics Research Centre |
| Item ID: | 13834 |
| Date Deposited: | 03 Jan 2005 |
| Last Modified: | 19 Feb 2013 13:57 |
| Contributors: | Dragomir, A. (Author) Nikogosyan, D.N. (Author) Brambilla, G. (Author) |
| Date: | 2003 |
| Status: | Published |
| URI: | http://eprints.soton.ac.uk/id/eprint/13834 |
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