Increased photosensitivity of Ge-doped and Ge, Sn-doped fibres under high-intensity 264 nm laser light
Dragomir, A., Nikogosyan, D.N. and Brambilla, G. (2003) Increased photosensitivity of Ge-doped and Ge, Sn-doped fibres under high-intensity 264 nm laser light. Electronics Letters, 39, (20), 1437-1439.
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An enhanced photosensitivity was observed in 30 mol% Ge-doped fibre and 30 mol% Ge-doped, 1 mol% Sn-codoped fibre when exposed to high-intensity (73-86 GW/cm2) femtosecond laser pulses at 264 nm.
|Subjects:||Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions:||University Structure - Pre August 2011 > Optoelectronics Research Centre
|Date Deposited:||03 Jan 2005|
|Last Modified:||19 Feb 2013 13:57|
|Contributors:||Dragomir, A. (Author)
Nikogosyan, D.N. (Author)
Brambilla, G. (Author)
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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