Excitation energy transfer rate from langmuir blodgett (LB) dye monolayers to silicon: effect of aggregate formation

Danos, Lefteris and Markvart, Tomas (2010) Excitation energy transfer rate from langmuir blodgett (LB) dye monolayers to silicon: effect of aggregate formation. Chemical Physics Letters, 490 (4-6), 194-199. (doi:10.1016/j.cplett.2010.03.045).

Abstract

Time-resolved emission spectra (TRES) and decay curves have been recorded from mixed LB oxacarbocyanine
dye monolayers and stearic acid at different distances to the silicon surface. We observe interlayer
energy transfer between monomers and dimers present in the monolayer competing directly with energy
transfer to silicon at close distances. We resolve these competing processes by studying the TRES spectra
and decompose them into their emission components. We found the energy transfer rate for the monomer
to silicon to be double than that of the dimer at a distance of d ~ 5 nm to the silicon surface. The
Förster radius for the energy transfer to silicon was estimated at 5.5 ± 0.5 nm.

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