Vertical-external-cavity semiconductor lasers

Tropper, A.C., Foreman, H.D., Garnache, A., Wilcox, K.G. and Hoogland, S. (2004) Vertical-external-cavity semiconductor lasers. Journal of Physics D: Applied Physics, 37, (9), R75-R85. (doi:10.1088/0022-3727/37/9/R01).


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Surface-emitting semiconductor lasers can make use of external cavities and optical pumping techniques to achieve a combination of high continuous-wave output power and near-diffraction-limited beam quality that is not matched by any other type of semiconductor source. The ready access to the laser mode that the external cavity provides has been exploited for applications such as intra-cavity frequency doubling and passive mode-locking. The purpose of this Topical Review is to outline the operating principles of these versatile lasers and summarize the capabilities of devices that have been demonstrated so far. Particular attention is paid to the generation of near-transform-limited sub-picosecond pulses in passively mode-locked surface-emitting lasers, which are potentially of interest as compact sources of ultrashort pulses at high average power that can be operated readily at repetition rates of many gigahertz.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1088/0022-3727/37/9/R01
ISSNs: 0022-3727 (print)
Related URLs:
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
Divisions : University Structure - Pre August 2011 > School of Physics and Astronomy
ePrint ID: 15016
Accepted Date and Publication Date:
7 May 2004Published
Date Deposited: 11 Mar 2005
Last Modified: 31 Mar 2016 11:28

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