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Passively mode-locked diode-pumped surface-emitting diode laser

Passively mode-locked diode-pumped surface-emitting diode laser
Passively mode-locked diode-pumped surface-emitting diode laser
We demonstrate to our knowledge the first passively mode-locked surface-emitting semiconductor laser. We used a 3-W high-brightness diode laser as pump source and a semiconductor saturable absorber mirror (SESAM [1,2]) as modelocker. The laser generates two stably mode-locked output beams with 11 mW average power each, 26ps pulse duration, and a repetition rate of 4.4 GHz. In contrast to edge-emitting semiconductor optically pumped semiconductor vertical external cavity surface emitting lasers [OPS-VECSELs) allow one to scale up the mode area in order to generate a high average power and high pulse energies, while the external cavity enforces a diffraction-limited output. A diffraction-limited output with >0.5 W in cw operation has been demonstrated for a similar kind of device [3]. Thus our concept promises to be scalable to much higher average and peak powers than can be obtained from electrically pumped surface-emitting mode-locked diode lasers or from edge emitting
diode lasers. Only synchronously pumped surface emitting semiconductor lasers have generated pulses with high average power and pulse energy, but these require a powerful pulsed pump source [4]. Compared to mode-locked laser based on ion-doped crystals or glasses. mode-locked semiconductor lasers can generate high repetition rate (multi-GHz) pulse trains without Q-switching instabilities [5]. Their broad amplification bandwidth is sufficient for pulse durations in the femtosecond regime.
Häring, R.
6251f72c-3183-4917-a6bb-7f2323d76195
Paschotta, R.
d9e3d753-48c1-405f-b31e-e662f23a70a4
Morier-Genoud, F.
278a30bf-4939-47ed-b523-26e3f017cd4e
Keller, U.
799a6b8e-4423-40a2-be88-ebc521eb9952
Roberts, J.S.
c4eae59e-8356-4436-b317-670038103d16
Hoogland, S.
4cb41793-ad90-41f3-9944-bc8774fac5cb
Dhanjal, S.
a3f4fa8d-654f-4162-bd38-67c9b2d2f136
Tropper, A.C.
f3505426-e0d5-4e91-aed3-aecdb44b393c
Häring, R.
6251f72c-3183-4917-a6bb-7f2323d76195
Paschotta, R.
d9e3d753-48c1-405f-b31e-e662f23a70a4
Morier-Genoud, F.
278a30bf-4939-47ed-b523-26e3f017cd4e
Keller, U.
799a6b8e-4423-40a2-be88-ebc521eb9952
Roberts, J.S.
c4eae59e-8356-4436-b317-670038103d16
Hoogland, S.
4cb41793-ad90-41f3-9944-bc8774fac5cb
Dhanjal, S.
a3f4fa8d-654f-4162-bd38-67c9b2d2f136
Tropper, A.C.
f3505426-e0d5-4e91-aed3-aecdb44b393c

Häring, R., Paschotta, R., Morier-Genoud, F., Keller, U., Roberts, J.S., Hoogland, S., Dhanjal, S. and Tropper, A.C. (2000) Passively mode-locked diode-pumped surface-emitting diode laser. ASSL, Davos, Switzerland. 13 - 16 Feb 2000.

Record type: Conference or Workshop Item (Paper)

Abstract

We demonstrate to our knowledge the first passively mode-locked surface-emitting semiconductor laser. We used a 3-W high-brightness diode laser as pump source and a semiconductor saturable absorber mirror (SESAM [1,2]) as modelocker. The laser generates two stably mode-locked output beams with 11 mW average power each, 26ps pulse duration, and a repetition rate of 4.4 GHz. In contrast to edge-emitting semiconductor optically pumped semiconductor vertical external cavity surface emitting lasers [OPS-VECSELs) allow one to scale up the mode area in order to generate a high average power and high pulse energies, while the external cavity enforces a diffraction-limited output. A diffraction-limited output with >0.5 W in cw operation has been demonstrated for a similar kind of device [3]. Thus our concept promises to be scalable to much higher average and peak powers than can be obtained from electrically pumped surface-emitting mode-locked diode lasers or from edge emitting
diode lasers. Only synchronously pumped surface emitting semiconductor lasers have generated pulses with high average power and pulse energy, but these require a powerful pulsed pump source [4]. Compared to mode-locked laser based on ion-doped crystals or glasses. mode-locked semiconductor lasers can generate high repetition rate (multi-GHz) pulse trains without Q-switching instabilities [5]. Their broad amplification bandwidth is sufficient for pulse durations in the femtosecond regime.

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Published date: 2000
Venue - Dates: ASSL, Davos, Switzerland, 2000-02-13 - 2000-02-16

Identifiers

Local EPrints ID: 16975
URI: http://eprints.soton.ac.uk/id/eprint/16975
PURE UUID: 0e001144-f988-4579-a108-18a80c4442c7

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Date deposited: 23 Aug 2005
Last modified: 15 Mar 2024 05:50

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Contributors

Author: R. Häring
Author: R. Paschotta
Author: F. Morier-Genoud
Author: U. Keller
Author: J.S. Roberts
Author: S. Hoogland
Author: S. Dhanjal
Author: A.C. Tropper

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