High index contrast Er:Ta2O5 waveguide amplifier on oxidised silicon

Subramanian, Ananth Z., Murugan, G.Senthil, Zervas, Michalis N. and Wilkinson, James S. (2012) High index contrast Er:Ta2O5 waveguide amplifier on oxidised silicon. Optics Communications, 285, (2), 124-127. (doi:10.1016/j.optcom.2011.09.028).


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We report a high index contrast erbium doped tantalum pentoxide waveguide amplifier. 2.3 cm long waveguides with erbium concentration of 2.7 × 1020 cm^-3 were fabricated by magnetron sputtering of Er-doped tantalum pentoxide on oxidised silicon substrates and Ar-ion milling with photolithographically defined mask. A net on-chip optical gain of ~2.25 dB/cm at 1531.5 nm was achieved with 20mW of pump power at 977 nm launched into the waveguide. The pump threshold for transparency was 4.5mW.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1016/j.optcom.2011.09.028
ISSNs: 0030-4018 (print)
Related URLs:
Keywords: erbium doped waveguide amplifier, tantalum pentoxide, optical amplifier, high index contrast, integrated optics; Erbium
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions : Faculty of Physical Sciences and Engineering > Optoelectronics Research Centre
ePrint ID: 205577
Accepted Date and Publication Date:
15 January 2012Published
28 September 2011Made publicly available
Date Deposited: 12 Dec 2011 15:16
Last Modified: 31 Mar 2016 13:47
URI: http://eprints.soton.ac.uk/id/eprint/205577

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