High index contrast Er:Ta2O5 waveguide amplifier on oxidised silicon
Subramanian, Ananth Z., Murugan, G.Senthil, Zervas, Michalis N. and Wilkinson, James S. (2012) High index contrast Er:Ta2O5 waveguide amplifier on oxidised silicon. Optics Communications, 285, (2), 124-127. (doi:10.1016/j.optcom.2011.09.028).
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We report a high index contrast erbium doped tantalum pentoxide waveguide amplifier. 2.3 cm long waveguides with erbium concentration of 2.7 × 1020 cm^-3 were fabricated by magnetron sputtering of Er-doped tantalum pentoxide on oxidised silicon substrates and Ar-ion milling with photolithographically defined mask. A net on-chip optical gain of ~2.25 dB/cm at 1531.5 nm was achieved with 20mW of pump power at 977 nm launched into the waveguide. The pump threshold for transparency was 4.5mW.
|Keywords:||erbium doped waveguide amplifier, tantalum pentoxide, optical amplifier, high index contrast, integrated optics; Erbium|
|Subjects:||Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions:||Faculty of Physical Sciences and Engineering > Optoelectronics Research Centre
|Date Deposited:||12 Dec 2011 15:16|
|Last Modified:||12 Aug 2015 15:47|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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