High index contrast Er:Ta2O5 waveguide amplifier on oxidised silicon
Subramanian, Ananth Z., Murugan, G. Senthil, Zervas, Michalis N. and Wilkinson, James S. (2012) High index contrast Er:Ta2O5 waveguide amplifier on oxidised silicon. Optics Communications, 285, (2), 124-127. (doi:10.1016/j.optcom.2011.09.028).
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Description/Abstract
We report a high index contrast erbium doped tantalum pentoxide waveguide amplifier. 2.3 cm long waveguides with erbium concentration of 2.7 × 1020 cm^-3 were fabricated by magnetron sputtering of Er-doped tantalum pentoxide on oxidised silicon substrates and Ar-ion milling with photolithographically defined mask. A net on-chip optical gain of ~2.25 dB/cm at 1531.5 nm was achieved with 20mW of pump power at 977 nm launched into the waveguide. The pump threshold for transparency was 4.5mW.
| Item Type: | Article |
|---|---|
| ISSNs: | 0030-4018 (print) |
| Related URLs: | |
| Keywords: | erbium doped waveguide amplifier, tantalum pentoxide, optical amplifier, high index contrast, integrated optics; Erbium |
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Physical and Applied Science > Optoelectronics Research Centre |
| Item ID: | 205577 |
| Date Deposited: | 12 Dec 2011 15:16 |
| Last Modified: | 26 Apr 2013 01:18 |
| Contributors: | Subramanian, Ananth Z. (Author) Murugan, G. Senthil (Author) Zervas, Michalis N. (Author) Wilkinson, James S. (Author) |
| Date: | 15 January 2012 |
| Status: | Published |
| URI: | http://eprints.soton.ac.uk/id/eprint/205577 |
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