Electrodeposition of Ni-Si Schottky barriers
Kiziroglou, M.E., Zhukov, A.A., Abdelsalam, M., Li, X.L., De Groot, P.A.J., Bartlett, P.N. and De Groot, C.H. (2005) Electrodeposition of Ni-Si Schottky barriers. IEEE Transactions on Magnetics, 41, (10), 2639-2641. (doi:10.1109/TMAG.2005.854737)
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Official URL: http://dx.doi.org/10.1109/TMAG.2005.854737
Description/Abstract
Electrodeposition is being used to fabricate magnetic microstructures directly on patterned n-type Si wafers of various substrate resistivities. The Ni-Si Schottky barrier is characterized and found to be of high quality for relatively low Si resistivities (1-2 Omega(.)cm), with extremely low reverse leakage. It is shown that a direct correlation exists among the electrodeposition potential, the roughness, and the coercivity of the films. A conductive seed layer or a back contact is not compulsory for electrodeposition on Si with resistivities up to 15 Omega(.)cm. This shows that electrodeposition of magnetic materials on Si might be a viable fabrication technique for magnetoresistance and spintronics applications.
| Item Type: | Article |
|---|---|
| ISSN: | 0018-9464 (print) |
| Uncontrolled Keywords: | electrodeposition, schottky barriers, silicon, spintronics |
| Related URLs: | http://dx.doi.org/10.1109/TMAG...005.854737 |
| Subjects: | Q Science > QA Mathematics > QA75 Electronic computers. Computer science Q Science > QD Chemistry Q Science > QC Physics |
| Divisions: | University Structure - Pre August 2011 > School of Electronics and Computer Science University Structure - Pre August 2011 > School of Physics and Astronomy University Structure - Pre August 2011 > School of Chemistry |
| ePrint ID: | 20839 |
| URI: | http://eprints.soton.ac.uk/id/eprint/20839 |
| Deposited On: | 02 Mar 2006 |
| Last Modified: | 02 Mar 2012 11:25 |
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