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Confined high-pressure chemical deposition of hydrogenated amorphous silicon

Confined high-pressure chemical deposition of hydrogenated amorphous silicon
Confined high-pressure chemical deposition of hydrogenated amorphous silicon
Hydrogenated amorphous silicon (a-Si:H) is one of the most technologically important semi-conductors. The challenge in producing it from SiH4 precursor is to overcome a significant kinetic barrier to decomposition at a low enough temperature to allow for hydrogen incorporation into a deposited film. The use of high precursor concentrations is one possible means to increase reaction rates at low enough temperatures, but in conventional reactors such an approach produces large numbers of homogeneously nucleated particles in the gas phase, rather than the desired heterogeneous deposition on a surface. We report that deposition in confined micro-/nanoreactors overcomes this difficulty, allowing for the use of silane concentrations many orders of magnitude higher than conventionally employed while still realizing well-developed films. a-Si:H micro-/nanowires can be deposited in this way in extreme aspect ratio, small- diameter optical fiber capillary templates. The semi- conductor materials deposited have ~0.5 atom% hydrogen with passivated dangling bonds and good electronic properties. They should be suitable for a wide range of photonic and electronic applications such as nonlinear optical fibers and solar cells
0002-7863
19-22
Baril, Neil F.
874307ff-dbed-4c25-91a5-49288b19be29
He, Rongrui
d89761c0-6ad3-460b-80a1-154d33763bdb
Day, Todd D.
71079fe7-e66e-406b-8d3a-bddb030e03ff
Sparks, Justin R.
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Keshavarzi, Banafsheh
66f02faf-bb7e-409a-914c-d6a9ec0fcc52
Krishnamurthi, Mahesh
f707c230-29e8-436d-a160-a54f41ae5305
Borhan, Ali
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Gopalan, Venkatraman
c37ec093-614a-4b1c-a6ec-a5b32f398a58
Peacock, Anna C.
685d924c-ef6b-401b-a0bd-acf1f8e758fc
Healy, Noel
26eec85c-8d12-4f21-a67a-022f8dc2daab
Sazio, Pier J.A.
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Badding, John V.
dd484978-a8b8-4d1f-9b9e-b6b33bde9e7b
Baril, Neil F.
874307ff-dbed-4c25-91a5-49288b19be29
He, Rongrui
d89761c0-6ad3-460b-80a1-154d33763bdb
Day, Todd D.
71079fe7-e66e-406b-8d3a-bddb030e03ff
Sparks, Justin R.
68cb6a0c-29ef-4487-8940-557b05b08568
Keshavarzi, Banafsheh
66f02faf-bb7e-409a-914c-d6a9ec0fcc52
Krishnamurthi, Mahesh
f707c230-29e8-436d-a160-a54f41ae5305
Borhan, Ali
3dddba0a-7321-49a1-b7e4-a37bad807ba0
Gopalan, Venkatraman
c37ec093-614a-4b1c-a6ec-a5b32f398a58
Peacock, Anna C.
685d924c-ef6b-401b-a0bd-acf1f8e758fc
Healy, Noel
26eec85c-8d12-4f21-a67a-022f8dc2daab
Sazio, Pier J.A.
0d6200b5-9947-469a-8e97-9147da8a7158
Badding, John V.
dd484978-a8b8-4d1f-9b9e-b6b33bde9e7b

Baril, Neil F., He, Rongrui, Day, Todd D., Sparks, Justin R., Keshavarzi, Banafsheh, Krishnamurthi, Mahesh, Borhan, Ali, Gopalan, Venkatraman, Peacock, Anna C., Healy, Noel, Sazio, Pier J.A. and Badding, John V. (2012) Confined high-pressure chemical deposition of hydrogenated amorphous silicon. Journal of the American Chemical Society, 134 (1), 19-22. (doi:10.1021/ja2067862).

Record type: Article

Abstract

Hydrogenated amorphous silicon (a-Si:H) is one of the most technologically important semi-conductors. The challenge in producing it from SiH4 precursor is to overcome a significant kinetic barrier to decomposition at a low enough temperature to allow for hydrogen incorporation into a deposited film. The use of high precursor concentrations is one possible means to increase reaction rates at low enough temperatures, but in conventional reactors such an approach produces large numbers of homogeneously nucleated particles in the gas phase, rather than the desired heterogeneous deposition on a surface. We report that deposition in confined micro-/nanoreactors overcomes this difficulty, allowing for the use of silane concentrations many orders of magnitude higher than conventionally employed while still realizing well-developed films. a-Si:H micro-/nanowires can be deposited in this way in extreme aspect ratio, small- diameter optical fiber capillary templates. The semi- conductor materials deposited have ~0.5 atom% hydrogen with passivated dangling bonds and good electronic properties. They should be suitable for a wide range of photonic and electronic applications such as nonlinear optical fibers and solar cells

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More information

Published date: 8 December 2012
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 209063
URI: http://eprints.soton.ac.uk/id/eprint/209063
ISSN: 0002-7863
PURE UUID: 27bea25c-7a22-460a-a21a-5d93c67c99a8
ORCID for Anna C. Peacock: ORCID iD orcid.org/0000-0002-1940-7172
ORCID for Pier J.A. Sazio: ORCID iD orcid.org/0000-0002-6506-9266

Catalogue record

Date deposited: 25 Jan 2012 14:36
Last modified: 15 Mar 2024 03:15

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Contributors

Author: Neil F. Baril
Author: Rongrui He
Author: Todd D. Day
Author: Justin R. Sparks
Author: Banafsheh Keshavarzi
Author: Mahesh Krishnamurthi
Author: Ali Borhan
Author: Venkatraman Gopalan
Author: Anna C. Peacock ORCID iD
Author: Noel Healy
Author: Pier J.A. Sazio ORCID iD
Author: John V. Badding

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