Enhanced diffusion following point defect injection into B in SiGe and Si
Willoughby, Arthur F.W., Bonar, Janet M., Dan, Aihua and McGregor, Barry M. (2001) Enhanced diffusion following point defect injection into B in SiGe and Si. Defect and Diffusion Forum, 194-199, 717 -722.
Download
Full text not available from this repository.
Original Publication URL: http://www.scientific.net/default.cfm?pdf=1&issn=1...
| Item Type: | Article |
|---|---|
| ISSNs: | 1012-0386 (print) |
| Related URLs: | |
| Keywords: | boron, diffusion, diffusion mechanism, enhanced diffusion, point defect injection, silicon, silicon-germanium |
| Subjects: | T Technology > T Technology (General) Q Science > QD Chemistry Q Science > QC Physics |
| Divisions: | University Structure - Pre August 2011 > School of Engineering Sciences University Structure - Pre August 2011 > School of Electronics and Computer Science |
| Item ID: | 21487 |
| Date Deposited: | 13 Mar 2006 |
| Last Modified: | 01 Apr 2012 01:26 |
| Contributors: | Willoughby, Arthur F.W. (Author) Bonar, Janet M. (Author) Dan, Aihua (Author) McGregor, Barry M. (Author) |
| Date: | 2001 |
| Status: | Published |
| URI: | http://eprints.soton.ac.uk/id/eprint/21487 |
Actions (login required)
 |
View Item |
