Enhanced diffusion following point defect injection into B in SiGe and Si


Willoughby, Arthur F.W., Bonar, Janet M., Dan, Aihua and McGregor, Barry M. (2001) Enhanced diffusion following point defect injection into B in SiGe and Si. Defect and Diffusion Forum, 194-199, 717 -722.

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Item Type: Article
ISSNs: 1012-0386 (print)
Related URLs:
Keywords: boron, diffusion, diffusion mechanism, enhanced diffusion, point defect injection, silicon, silicon-germanium
Subjects: T Technology > T Technology (General)
Q Science > QD Chemistry
Q Science > QC Physics
Divisions: University Structure - Pre August 2011 > School of Engineering Sciences
University Structure - Pre August 2011 > School of Electronics and Computer Science
ePrint ID: 21487
Date Deposited: 13 Mar 2006
Last Modified: 27 Mar 2014 18:10
URI: http://eprints.soton.ac.uk/id/eprint/21487

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