Diffusion of ion-implanted boron in germanium
Uppal, Suresh, Willoughby, Arthur F.W., Bonar, Janet M., Evans, Alan G.R., Cowern, Nick E.B., Morris, Richard and Dowsett, Mark G. (2001) Diffusion of ion-implanted boron in germanium. Journal of Applied Physics, 90, (8), 4293-4295. (doi:10.1063/1.1402664).
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Description/Abstract
The diffusion of boron (B) in germanium (Ge) is studied. B was introduced in Ge wafers by ion implantation, and concentration profiles after furnace annealing were obtained using secondary ion mass spectroscopy. The diffusion coefficient and solid solubility of B in Ge has been calculated to be 1.5(±0.3)×10–16 cm2/s and 5.5(±1.0)×1018/cm3, respectively, at 850 °C by fitting experimentally obtained profiles. This value of diffusion coefficient is at least two orders of magnitude lower than the minimum value reported in the literature for B diffusion in Ge. The results are significant as they question the general agreement about vacancy diffusion as the mechanism responsible for diffusion of B in Ge.
| Item Type: | Article |
|---|---|
| Related URLs: | |
| Subjects: | T Technology > T Technology (General) Q Science > QC Physics |
| Divisions: | University Structure - Pre August 2011 > School of Engineering Sciences University Structure - Pre August 2011 > School of Electronics and Computer Science |
| Item ID: | 21789 |
| Date Deposited: | 13 Mar 2006 |
| Last Modified: | 02 Mar 2012 13:05 |
| Contributors: | Uppal, Suresh (Author) Willoughby, Arthur F.W. (Author) Bonar, Janet M. (Author) Evans, Alan G.R. (Author) Cowern, Nick E.B. (Author) Morris, Richard (Author) Dowsett, Mark G. (Author) |
| Date: | 2001 |
| Status: | Published |
| Contact Email Address: | suresh@soton.ac.uk |
| URI: | http://eprints.soton.ac.uk/id/eprint/21789 |
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