Diffusion of ion-implanted boron in germanium
Uppal, Suresh, Willoughby, Arthur F.W., Bonar, Janet M., Evans, Alan G.R., Cowern, Nick E.B., Morris, Richard and Dowsett, Mark G. (2001) Diffusion of ion-implanted boron in germanium. Journal of Applied Physics, 90, (8), 4293-4295. (doi:10.1063/1.1402664).
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The diffusion of boron (B) in germanium (Ge) is studied. B was introduced in Ge wafers by ion implantation, and concentration profiles after furnace annealing were obtained using secondary ion mass spectroscopy. The diffusion coefficient and solid solubility of B in Ge has been calculated to be 1.5(±0.3)×10–16 cm2/s and 5.5(±1.0)×1018/cm3, respectively, at 850 °C by fitting experimentally obtained profiles. This value of diffusion coefficient is at least two orders of magnitude lower than the minimum value reported in the literature for B diffusion in Ge. The results are significant as they question the general agreement about vacancy diffusion as the mechanism responsible for diffusion of B in Ge.
|Digital Object Identifier (DOI):||doi:10.1063/1.1402664|
|Subjects:||T Technology > T Technology (General)
Q Science > QC Physics
|Divisions:||University Structure - Pre August 2011 > School of Engineering Sciences
University Structure - Pre August 2011 > School of Electronics and Computer Science
|Date Deposited:||13 Mar 2006|
|Last Modified:||06 Aug 2015 02:20|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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