Diffusion of ion-implanted boron in germanium

Uppal, Suresh, Willoughby, Arthur F.W., Bonar, Janet M., Evans, Alan G.R., Cowern, Nick E.B., Morris, Richard and Dowsett, Mark G. (2001) Diffusion of ion-implanted boron in germanium. Journal of Applied Physics, 90, (8), 4293-4295. (doi:10.1063/1.1402664).


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Original Publication URL: http://dx.doi.org/10.1063/1.1402664


The diffusion of boron (B) in germanium (Ge) is studied. B was introduced in Ge wafers by ion implantation, and concentration profiles after furnace annealing were obtained using secondary ion mass spectroscopy. The diffusion coefficient and solid solubility of B in Ge has been calculated to be 1.5(±0.3)×10–16 cm2/s and 5.5(±1.0)×1018/cm3, respectively, at 850 °C by fitting experimentally obtained profiles. This value of diffusion coefficient is at least two orders of magnitude lower than the minimum value reported in the literature for B diffusion in Ge. The results are significant as they question the general agreement about vacancy diffusion as the mechanism responsible for diffusion of B in Ge.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1063/1.1402664
Related URLs:
Subjects: T Technology > T Technology (General)
Q Science > QC Physics
Divisions : University Structure - Pre August 2011 > School of Engineering Sciences
University Structure - Pre August 2011 > School of Electronics and Computer Science
ePrint ID: 21789
Accepted Date and Publication Date:
Date Deposited: 13 Mar 2006
Last Modified: 31 Mar 2016 11:40
URI: http://eprints.soton.ac.uk/id/eprint/21789

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