Furnace and RTA injection of point defects into CVD grown B-doped Si and SiGe


Bonar, J.M., McGregor, B.M., Cowern, N.E.B., Dan, A.H., Cooke, G.A. and Willoughby, A.F.W. (2001) Furnace and RTA injection of point defects into CVD grown B-doped Si and SiGe. In, Materials Research Society Symposium Proceedings. , Materials Research Socciety, B4.9.1-B4.9.6.

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Description/Abstract

The diffusion of B in Si and SiGe under the influence of point defect injection by Rapid Thermal Anneal (RTA) and conventional anneal is studied in this work.

Item Type: Book Section
Additional Information: Symposium B
Related URLs:
Subjects: T Technology > T Technology (General)
Q Science > Q Science (General)
Divisions: University Structure - Pre August 2011 > School of Engineering Sciences
ePrint ID: 21791
Date Deposited: 30 Mar 2006
Last Modified: 27 Mar 2014 18:11
URI: http://eprints.soton.ac.uk/id/eprint/21791

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