Furnace and RTA injection of point defects into CVD grown B-doped Si and SiGe
Bonar, J.M., McGregor, B.M., Cowern, N.E.B., Dan, A.H., Cooke, G.A. and Willoughby, A.F.W. (2001) Furnace and RTA injection of point defects into CVD grown B-doped Si and SiGe. In, Materials Research Society Symposium Proceedings. , Materials Research Socciety, B4.9.1-B4.9.6.
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Description/Abstract
The diffusion of B in Si and SiGe under the influence of point defect injection by Rapid Thermal Anneal (RTA) and conventional anneal is studied in this work.
| Item Type: | Book Section |
|---|---|
| Additional Information: | Symposium B |
| Related URLs: | |
| Subjects: | T Technology > T Technology (General) Q Science > Q Science (General) |
| Divisions: | University Structure - Pre August 2011 > School of Engineering Sciences |
| Item ID: | 21791 |
| Date Deposited: | 30 Mar 2006 |
| Last Modified: | 02 Mar 2012 12:46 |
| Contributors: | Bonar, J.M. (Author) McGregor, B.M. (Author) Cowern, N.E.B. (Author) Dan, A.H. (Author) Cooke, G.A. (Author) Willoughby, A.F.W. (Author) |
| Date: | 2001 |
| Additional Information: | Symposium B |
| Status: | Published |
| Publisher: | Materials Research Socciety |
| URI: | http://eprints.soton.ac.uk/id/eprint/21791 |
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