Diffusion of boron in germanium
Uppal, Suresh and Willoughby, Arthur F.W. (2001) Diffusion of boron in germanium. In, Proceedings of the Seventh Postgraduate Conference in Engineering Materials,, Southampton, UK, Oct 2001. , 19-20.
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Results are presented of implantation and diffusion
study of boron (B) in germanium (Ge). B implantation
was carried out in Ge with differrent energies and to different
doses. High-resolution secondary ion mass spectroscopy
(SIMS) was used to obtain concentration profiles after furnace
annealing. The as-implanted profiles show a long tail possibly
due to enhanced diffusion. A limited diffusion has been observed
after furnace annealing. Using T-SUPREM, diffusivity
value of 1.5 (:J:0: .3) X 10-16 cm2/s at 850°C has been extracted.
This value is two orders of magnitude lower than previously
reported values. The results question the change in diffusion
mechanism of B diffusion in SiGe alloys from low Ge leveIs to
high Ge leveIs.
|Item Type:||Conference or Workshop Item (Paper)|
|Keywords:||boron, germanium, diffusion, sims|
|Subjects:||Q Science > Q Science (General)
T Technology > TA Engineering (General). Civil engineering (General)
|Divisions:||University Structure - Pre August 2011 > School of Engineering Sciences
|Date Deposited:||19 Mar 2007|
|Last Modified:||02 Mar 2012 12:26|
|Contributors:||Uppal, Suresh (Author)
Willoughby, Arthur F.W. (Author)
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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