Ion-implantation and diffusion behaviour of boron in germanium
Uppal, Suresh, Willoughby, A.F.W., Bonar, Janet M., Evans, Alan G.R., Cowern, Nick E.B., Morris, Richard and Dowsett, Mark G. (2001) Ion-implantation and diffusion behaviour of boron in germanium. Physica B: Condensed Matter, 308-310, 525-528. (doi: 10.1016/S0921-4526(01)00752-9).
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Description/Abstract
Results are presented of implantation and diffusion study of boron (B) in germanium (Ge). B implantation was carried out in Ge with different energies and to different doses. High-resolution secondary ion mass spectroscopy was used to obtain concentration profiles after furnace annealing. The as-implanted profiles show a long tail possibly due to enhanced diffusion. A limited diffusion has been observed after furnace annealing. Using T-SUPREM, diffusivity value of 1.5(±0.3)×10−16 cm2/s at 850°C has been extracted. This value is two orders of magnitude lower than previously reported values. The results question the change in diffusion mechanism of B diffusion in Si–Ge alloys from low Ge levels to high Ge levels.
| Item Type: | Article |
|---|---|
| ISSNs: | 0921-4526 (print) |
| Related URLs: | |
| Keywords: | germanium, boron, ion implantation, diffusion |
| Subjects: | T Technology > T Technology (General) Q Science > Q Science (General) |
| Divisions: | University Structure - Pre August 2011 > School of Engineering Sciences |
| Item ID: | 21959 |
| Date Deposited: | 20 Mar 2006 |
| Last Modified: | 01 Jun 2011 04:00 |
| Contributors: | Uppal, Suresh (Author) Willoughby, A.F.W. (Author) Bonar, Janet M. (Author) Evans, Alan G.R. (Author) Cowern, Nick E.B. (Author) Morris, Richard (Author) Dowsett, Mark G. (Author) |
| Date: | 2001 |
| Status: | Published |
| Contact Email Address: | suresh@soton.ac.uk |
| URI: | http://eprints.soton.ac.uk/id/eprint/21959 |
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