Ion-implantation and diffusion behaviour of boron in germanium
Uppal, Suresh, Willoughby, A.F.W., Bonar, Janet M., Evans, Alan G.R., Cowern, Nick E.B., Morris, Richard and Dowsett, Mark G. (2001) Ion-implantation and diffusion behaviour of boron in germanium. Physica B: Condensed Matter, 308-310, 525-528. (doi: 10.1016/S0921-4526(01)00752-9).
Full text not available from this repository.
Results are presented of implantation and diffusion study of boron (B) in germanium (Ge). B implantation was carried out in Ge with different energies and to different doses. High-resolution secondary ion mass spectroscopy was used to obtain concentration profiles after furnace annealing. The as-implanted profiles show a long tail possibly due to enhanced diffusion. A limited diffusion has been observed after furnace annealing. Using T-SUPREM, diffusivity value of 1.5(±0.3)×10−16 cm2/s at 850°C has been extracted. This value is two orders of magnitude lower than previously reported values. The results question the change in diffusion mechanism of B diffusion in Si–Ge alloys from low Ge levels to high Ge levels.
|Keywords:||germanium, boron, ion implantation, diffusion|
|Subjects:||T Technology > T Technology (General)
Q Science > Q Science (General)
|Divisions:||University Structure - Pre August 2011 > School of Engineering Sciences
|Date Deposited:||20 Mar 2006|
|Last Modified:||27 Mar 2014 18:11|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
Actions (login required)