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Micro-Raman measurement of bending stresses in micromachined silicon flexures

Micro-Raman measurement of bending stresses in micromachined silicon flexures
Micro-Raman measurement of bending stresses in micromachined silicon flexures
Micron-scale characterization of mechanical stresses is essential for the successful design and operation of many micromachined devices. Here we report the use of Raman spectroscopy to measure the bending stresses in deep reactive-ion etched silicon flexures with a stress resolution of /spl sim/10 MPa and spatial resolution of /spl sim/1 /spl mu/m. The accuracy of the technique, as assessed by comparison to analytical and finite-element models of the deformation, is conservatively estimated to be 25 MPa. Implications for the use of this technique in microsystems design are discussed.
1057-7157
779-787
Srikar, V.T.
168310a0-86f6-405e-8b9f-5c995cb5f238
Swan, A.K.
7af9fca4-290d-4561-8bb3-e7a23c76aff5
Unlu, M.S.
1e09cd82-c2d1-44de-b505-739d6a60401c
Goldberg, B.B.
0b849801-9278-46ec-8fb6-718f53aa9b12
Spearing, S.M.
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a
Srikar, V.T.
168310a0-86f6-405e-8b9f-5c995cb5f238
Swan, A.K.
7af9fca4-290d-4561-8bb3-e7a23c76aff5
Unlu, M.S.
1e09cd82-c2d1-44de-b505-739d6a60401c
Goldberg, B.B.
0b849801-9278-46ec-8fb6-718f53aa9b12
Spearing, S.M.
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a

Srikar, V.T., Swan, A.K., Unlu, M.S., Goldberg, B.B. and Spearing, S.M. (2003) Micro-Raman measurement of bending stresses in micromachined silicon flexures. Journal of Microelectromechanical Systems, 12 (6), 779-787. (doi:10.1109/JMEMS.2003.820280).

Record type: Article

Abstract

Micron-scale characterization of mechanical stresses is essential for the successful design and operation of many micromachined devices. Here we report the use of Raman spectroscopy to measure the bending stresses in deep reactive-ion etched silicon flexures with a stress resolution of /spl sim/10 MPa and spatial resolution of /spl sim/1 /spl mu/m. The accuracy of the technique, as assessed by comparison to analytical and finite-element models of the deformation, is conservatively estimated to be 25 MPa. Implications for the use of this technique in microsystems design are discussed.

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Published date: 2003

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Local EPrints ID: 22781
URI: http://eprints.soton.ac.uk/id/eprint/22781
ISSN: 1057-7157
PURE UUID: 1ff25b1d-df29-4a0b-98ee-e54baf8e6a1d
ORCID for S.M. Spearing: ORCID iD orcid.org/0000-0002-3059-2014

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Date deposited: 10 Mar 2006
Last modified: 16 Mar 2024 03:37

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Contributors

Author: V.T. Srikar
Author: A.K. Swan
Author: M.S. Unlu
Author: B.B. Goldberg
Author: S.M. Spearing ORCID iD

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