Thermal mechanical behavior of thick PECVD for oxide films power MEMS applications
Zhang, Xin, Chen, Kuo-Shen and Spearing, S.Mark (2003) Thermal mechanical behavior of thick PECVD for oxide films power MEMS applications. Sensors and Actuators A: Physical, 103, (1-2), 263-270. (doi: 10.1016/S0924-4247(02)00343-6)
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Official URL: http://dx.doi.org/10.1016/S0924-4247(02)00343-6
Description/Abstract
This paper presents residual stress characterization and fracture analysis of thick plasma-enhanced chemical vapor deposition (PECVD) oxide films. The motivation for this work is to elucidate the factors contributing to residual stress, deformation and fracture of silicon oxide films so as to refine the microfabrication process for power microelectromechanical systems (MEMS) manufacturing. The stress–temperature behavior of PECVD oxide films during annealing was studied. Analyses of residual stress relaxation, intrinsic stress generation, and the large deformation response of wafers were carried out. Preliminary experimental observations and estimates of oxide fracture were also provided.
| Item Type: | Article |
|---|---|
| ISSN: | 0924-4247 (print) |
| Uncontrolled Keywords: | oxide MEMS, intrinsic stress, stress relaxation |
| Related URLs: | http://dx.doi.org/10.1016/S092...02)00343-6 |
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Divisions: | University Structure - Pre August 2011 > School of Engineering Sciences |
| ePrint ID: | 22831 |
| Deposited On: | 10 Mar 2006 |
| Last Modified: | 02 Jul 2010 02:40 |
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