Characterization of wafer-level thermocompression bonds
Characterization of wafer-level thermocompression bonds
Thermocompression bonding joins substrates via a bonding layer. In this paper, silicon substrates were bonded using gold thin films. Experimental data on the effects of bonding pressure (30 to 120 MPa), temperature (260 and 300/spl deg/C), and time (2 to 90 min) on the bond toughness, measured using the four-point bend technique, are presented. In general, higher temperature and pressure lead to higher toughness bonds. Considerable variation in toughness was observed across specimens. Possible causes of the nonuniform bond quality were explored using finite element analysis. Simulation results showed that the mask layout contributed to the pressure nonuniformity applied across the wafer. Finally, some process guidelines for successful wafer-level bonding using gold thin films are presented.
65, bond characterization, thermocompression bonding, wafer bonding
963-71
Tsau, C.H.
fedc90fd-54f5-417a-8b6e-2447a63b6e87
Schmidt, M.A.
70d8449e-0448-4aab-89a5-59d61de752ad
Spearing, S.M.
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a
2004
Tsau, C.H.
fedc90fd-54f5-417a-8b6e-2447a63b6e87
Schmidt, M.A.
70d8449e-0448-4aab-89a5-59d61de752ad
Spearing, S.M.
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a
Tsau, C.H., Schmidt, M.A. and Spearing, S.M.
(2004)
Characterization of wafer-level thermocompression bonds.
Journal of Microelectromechanical Systems, 13 (6), .
(doi:10.1109/JMEMS.2004.838393).
Abstract
Thermocompression bonding joins substrates via a bonding layer. In this paper, silicon substrates were bonded using gold thin films. Experimental data on the effects of bonding pressure (30 to 120 MPa), temperature (260 and 300/spl deg/C), and time (2 to 90 min) on the bond toughness, measured using the four-point bend technique, are presented. In general, higher temperature and pressure lead to higher toughness bonds. Considerable variation in toughness was observed across specimens. Possible causes of the nonuniform bond quality were explored using finite element analysis. Simulation results showed that the mask layout contributed to the pressure nonuniformity applied across the wafer. Finally, some process guidelines for successful wafer-level bonding using gold thin films are presented.
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Published date: 2004
Keywords:
65, bond characterization, thermocompression bonding, wafer bonding
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Local EPrints ID: 23004
URI: http://eprints.soton.ac.uk/id/eprint/23004
ISSN: 1057-7157
PURE UUID: 5d5ad81d-4d43-49af-99cb-64525da2f394
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Date deposited: 10 Mar 2006
Last modified: 16 Mar 2024 03:37
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Author:
C.H. Tsau
Author:
M.A. Schmidt
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