Residual stress in thick low-pressure chemical-vapor deposited polycrystalline SiC coatings on Si substrates
Choi, D., Shinavski, R.J., Steffier, W.S. and Spearing, S.M. (2005) Residual stress in thick low-pressure chemical-vapor deposited polycrystalline SiC coatings on Si substrates. Journal of Applied Physics, 97, (7) (doi: 10.1063/1.1866495).
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Description/Abstract
Residual stress in thick coatings of polycrystalline chemical-vapor deposited SiC on Si substrates is a key variable that must be controlled if SiC is to be used in microelectromechanical systems. Studies have been conducted to characterize the residual stress level as a function of deposition temperature, Si wafer and SiC coating thickness, and the ratios of methyltrichlorosilane to hydrogen and hydrogen chloride. Wafer curvature was used to monitor residual stress in combination with a laminated plate analysis. Compressive intrinsic (growth) stresses were measured with magnitudes in the range of 200–300 MPa; however, these can be balanced with the tensile stress due to the thermal-expansion mismatch to leave near-zero stress at room temperature. The magnitude of the compressive intrinsic stress is consistent with previously reported values of surface stress in combination with the competition between grain-boundary energy and elastic strain energy
| Item Type: | Article |
|---|---|
| Additional Information: | Article No. 074904 |
| ISSNs: | 0021-8979 (print) |
| Related URLs: | |
| Subjects: | T Technology > T Technology (General) Q Science > QC Physics |
| Divisions: | University Structure - Pre August 2011 > School of Engineering Sciences |
| Item ID: | 23284 |
| Date Deposited: | 13 Mar 2006 |
| Last Modified: | 01 Jun 2011 04:02 |
| Contributors: | Choi, D. (Author) Shinavski, R.J. (Author) Steffier, W.S. (Author) Spearing, S.M. (Author) |
| Date: | 2005 |
| Additional Information: | Article No. 074904 |
| Status: | Published |
| Contact Email Address: | spearing@soton.ac.uk |
| URI: | http://eprints.soton.ac.uk/id/eprint/23284 |
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