Dry etching of SiC in inductively coupled Cl2/Ar plasma

Jiang, Liudi, Plank, N.O.V., Blaw, M.A., Cheung, R. and van der Drift, E. (2004) Dry etching of SiC in inductively coupled Cl2/Ar plasma. Journal of Physics D: Applied Physics, 37, (13), 1809-1814. (doi:10.1088/0022-3727/37/13/012).


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Inductively coupled Cl2/Ar plasma etching of 4H–SiC has been studied. The SiC etch rate has been investigated as a function of average ion energy, Ar concentration in the gas mixtures, inductively coupled plasma power, work pressure and substrate temperature. The etch mechanism has been investigated by correlating the ion current density and relative atomic chlorine content to the etch rate under various etch conditions. For the first time, it has been found that the etch rate of SiC increases by about 50% at lower substrate temperatures (-80°C) than at high substrate temperatures (150°C) with the highest SiC etch rate of 230 nm min^-1 being achieved at a substrate temperature of -80°C.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1088/0022-3727/37/13/012
ISSNs: 0022-3727 (print)
Related URLs:
Subjects: T Technology > TP Chemical technology
Divisions : University Structure - Pre August 2011 > School of Engineering Sciences
ePrint ID: 23539
Accepted Date and Publication Date:
Date Deposited: 23 Mar 2006
Last Modified: 31 Mar 2016 11:44
URI: http://eprints.soton.ac.uk/id/eprint/23539

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