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Impact of Ar addition to inductively coupled plasma etching of SiC in SF6/O2

Impact of Ar addition to inductively coupled plasma etching of SiC in SF6/O2
Impact of Ar addition to inductively coupled plasma etching of SiC in SF6/O2
The influence of Ar addition to SF6/O2 gas mixtures has been investigated for inductively coupled plasma (ICP) etching of SiC with a view to improve both etch rate and etched surface microstructure. SiC etch rates have been studied as a function of Ar concentration, gas flow rates, applied ICP power, chuck power and chamber pressure. SiC etch rate, surface morphology, surface chemistry and etch profiles obtained in SF6/O2/Ar gas mixtures have been compared with those of SiC-etched in SF6/O2 gas mixtures under similar conditions. It was found that, compared with SF6/O2 (4:1) ICP-etched SiC in our studies, smoother surfaces and significant reduction of fluorine-related etch residues can be obtained by optimum Ar addition. SiC etch rate in SF6/O2 gas mixtures can be increased by over 5% with optimum Ar%. The highest SiC etch rate achieved here is approximately 500 nm/min in SF6/O2/Ar gas mixtures. The influence of Ar addition on the SiC etch profile has also been studied.
silicon carbide, inductively coupled plasma, etch rate
0167-9317
306-311
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Cheung, R.
45525b9d-cadc-486b-be31-ffc764a9b93e
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Cheung, R.
45525b9d-cadc-486b-be31-ffc764a9b93e

Jiang, Liudi and Cheung, R. (2004) Impact of Ar addition to inductively coupled plasma etching of SiC in SF6/O2. Microelectronic Engineering, 73-74, 306-311. (doi:10.1016/j.mee.2004.02.058).

Record type: Article

Abstract

The influence of Ar addition to SF6/O2 gas mixtures has been investigated for inductively coupled plasma (ICP) etching of SiC with a view to improve both etch rate and etched surface microstructure. SiC etch rates have been studied as a function of Ar concentration, gas flow rates, applied ICP power, chuck power and chamber pressure. SiC etch rate, surface morphology, surface chemistry and etch profiles obtained in SF6/O2/Ar gas mixtures have been compared with those of SiC-etched in SF6/O2 gas mixtures under similar conditions. It was found that, compared with SF6/O2 (4:1) ICP-etched SiC in our studies, smoother surfaces and significant reduction of fluorine-related etch residues can be obtained by optimum Ar addition. SiC etch rate in SF6/O2 gas mixtures can be increased by over 5% with optimum Ar%. The highest SiC etch rate achieved here is approximately 500 nm/min in SF6/O2/Ar gas mixtures. The influence of Ar addition on the SiC etch profile has also been studied.

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More information

Published date: 2004
Keywords: silicon carbide, inductively coupled plasma, etch rate

Identifiers

Local EPrints ID: 23542
URI: http://eprints.soton.ac.uk/id/eprint/23542
ISSN: 0167-9317
PURE UUID: 8151083d-073c-4256-9b14-e19068f45830
ORCID for Liudi Jiang: ORCID iD orcid.org/0000-0002-3400-825X

Catalogue record

Date deposited: 23 Mar 2006
Last modified: 16 Mar 2024 03:47

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Contributors

Author: Liudi Jiang ORCID iD
Author: R. Cheung

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