The effect of plasma etching on the electrical characteristics of 4H-SiC Schottky diodes
Plank, N.O.V., Jiang, Liudi, Gundlach, A.M. and Cheung, R. (2002) The effect of plasma etching on the electrical characteristics of 4H-SiC Schottky diodes. In, Bergman, Peder and Janzén, Erik (eds.) Silicon Carbide and Related Materials - 2002. ECSERM 2002: 4th European Conference on Silicon Carbide and Related Materials Switzerland, Trans Tech, 689-692. (Materials Science Forum 433-436).
Download
Full text not available from this repository.
| Item Type: | Book Section |
|---|---|
| Additional Information: | Series ISSN 0255-5476. Conference paper: MoP3-16 |
| ISBNs: | 0878499202 (hardback) |
| Related URLs: | |
| Subjects: | T Technology > TN Mining engineering. Metallurgy |
| Divisions: | University Structure - Pre August 2011 > School of Engineering Sciences |
| Item ID: | 23549 |
| Date Deposited: | 05 Jun 2006 |
| Last Modified: | 02 Mar 2012 12:46 |
| Contributors: | Plank, N.O.V. (Author) Jiang, Liudi (Author) Gundlach, A.M. (Author) Cheung, R. (Author) Bergman, Peder (Editor) Janzén, Erik (Editor) |
| Date: | 2002 |
| Additional Information: | Series ISSN 0255-5476. Conference paper: MoP3-16 |
| Status: | Published |
| Publisher: | Trans Tech |
| URI: | http://eprints.soton.ac.uk/id/eprint/23549 |
Actions (login required)
 |
View Item |
