The effect of plasma etching on the electrical characteristics of 4H-SiC Schottky diodes


Plank, N.O.V., Jiang, Liudi, Gundlach, A.M. and Cheung, R. (2002) The effect of plasma etching on the electrical characteristics of 4H-SiC Schottky diodes. In, Bergman, Peder and Janzén, Erik (eds.) Silicon Carbide and Related Materials - 2002. ECSERM 2002: 4th European Conference on Silicon Carbide and Related Materials Switzerland, Trans Tech, 689-692. (Materials Science Forum 433-436).

Download

Full text not available from this repository.

Item Type: Book Section
Additional Information: Series ISSN 0255-5476. Conference paper: MoP3-16
ISBNs: 0878499202 (hardback)
Related URLs:
Subjects: T Technology > TN Mining engineering. Metallurgy
Divisions : University Structure - Pre August 2011 > School of Engineering Sciences
ePrint ID: 23549
Accepted Date and Publication Date:
Status
2002Published
Date Deposited: 05 Jun 2006
Last Modified: 31 Mar 2016 11:44
URI: http://eprints.soton.ac.uk/id/eprint/23549

Actions (login required)

View Item View Item