Characterisation of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT's
Anteney, I.M., Lippert, G., Ashburn, P., Osten, H.J., Heinemann, B., Parker, G.J. and Knoll, D. (1999) Characterisation of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT's. IEEE Electron Device Letters, 20, 116-118.
An electrical method is applied to SiGe and SiGeC HBTs to extract the bandgap narrowing in the base layer and to characterise the presence of parasitic energy barriers in the conduction band, arising from transient enhanced boron diffusion from the SiGe layer. It is shown that a background carbon concentration with the base of approximately 1E20cm-3 eliminates parasitic energy barriers at the C/B junction and hence shows that transient enhanced diffusion of boron from the base has been completely suppressed.
|Divisions:||Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
|Date Deposited:||06 Jan 2004|
|Last Modified:||02 Mar 2012 12:38|
|Contributors:||Anteney, I.M. (Author)
Lippert, G. (Author)
Ashburn, P. (Author)
Osten, H.J. (Author)
Heinemann, B. (Author)
Parker, G.J. (Author)
Knoll, D. (Author)
|Further Information:||Google Scholar|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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