"Fully self-aligned Si bipolar transistor with collector and base grown using silane-only selective epitaxy": Vol 32
Gregory, H J, Bonar, J M, Ashburn, P and Parker, G J (1996) "Fully self-aligned Si bipolar transistor with collector and base grown using silane-only selective epitaxy": Vol 32. , 850-851.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 250694 |
| Date Deposited: | 25 Aug 1999 |
| Last Modified: | 02 Mar 2012 11:56 |
| Contributors: | Gregory, H J (Author) Bonar, J M (Author) Ashburn, P (Author) Parker, G J (Author) |
| Date: | 1996 |
| Status: | Published |
| Publisher: | Electronics Letters |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/250694 |
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