"Fully self-aligned Si bipolar transistor with collector and base grown using silane-only selective epitaxy": Vol 32


Gregory, H J, Bonar, J M, Ashburn, P and Parker, G J (1996) "Fully self-aligned Si bipolar transistor with collector and base grown using silane-only selective epitaxy": Vol 32. , 850-851.

Download

Full text not available from this repository.

Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 250694
Date Deposited: 25 Aug 1999
Last Modified: 27 Mar 2014 19:51
Publisher: Electronics Letters
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250694

Actions (login required)

View Item View Item