Increased current gain and reduced emitter resistance in SiGe HBTs by fluorine or chlorine implantation into a polysilicon emitter contact


Schiz, J, Moiseiwitsch, N E, Marsh, C D, Ashburn, Peter and Booker, G R (1996) Increased current gain and reduced emitter resistance in SiGe HBTs by fluorine or chlorine implantation into a polysilicon emitter contact. , 461-464.

Download

Full text not available from this repository.

Item Type: Other
Additional Information: Organisation: Proc European Solid State Device Research Conference
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 250695
Date Deposited: 25 Aug 1999
Last Modified: 27 Mar 2014 19:51
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250695

Actions (login required)

View Item View Item