Leakage current mechanisms associated with selective epitaxy in SiGe heterojunction bipolar transistors
Schiz, J F W, Bonar, J M, Lamb, A C, Cristiano, F, Ashburn, P, Hemment, P L F and Hall, S (1999) Leakage current mechanisms associated with selective epitaxy in SiGe heterojunction bipolar transistors. Proceedings of 29th European Solid State Device Research Conference Editions Frontieres, 344-347.
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| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| ISBNs: | 2863322451 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 250911 |
| Date Deposited: | 01 Oct 1999 |
| Last Modified: | 02 Mar 2012 13:17 |
| Contributors: | Schiz, J F W (Author) Bonar, J M (Author) Lamb, A C (Author) Cristiano, F (Author) Ashburn, P (Author) Hemment, P L F (Author) Hall, S (Author) Maes, H E (Editor) Mertens, R P (Editor) Declerck, G (Editor) Grunbacher, H (Editor) |
| Date: | 1999 |
| Status: | Published |
| Publisher: | Editions Frontieres |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/250911 |
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