Selective and non-selective growth of self-aligned SiGe HBT structures by LPCVD epitaxy
Bonar, J M, Schiz, J and Ashburn, P (1999) Selective and non-selective growth of self-aligned SiGe HBT structures by LPCVD epitaxy. Journal of Materials Science: Materials in Electronics, 10, 345-349.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 250912 |
| Date Deposited: | 01 Oct 1999 |
| Last Modified: | 02 Mar 2012 12:38 |
| Contributors: | Bonar, J M (Author) Schiz, J (Author) Ashburn, P (Author) |
| Date: | 1999 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 6 |
| URI: | http://eprints.soton.ac.uk/id/eprint/250912 |
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