A selective/non selective epitaxy process for a novel SiGe HBT architecture
A selective/non selective epitaxy process for a novel SiGe HBT architecture
321-327
Schiz, J F W
6623181e-1e06-4e22-9bf3-5db9c17920bd
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
1998
Schiz, J F W
6623181e-1e06-4e22-9bf3-5db9c17920bd
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Schiz, J F W, Bonar, J M and Ashburn, P
(1998)
A selective/non selective epitaxy process for a novel SiGe HBT architecture.
Proceedings of Materials Research Society Spring Meeting.
.
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Conference or Workshop Item
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Published date: 1998
Venue - Dates:
Proceedings of Materials Research Society Spring Meeting, 1998-01-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250915
URI: http://eprints.soton.ac.uk/id/eprint/250915
PURE UUID: 32702438-691f-42b7-8761-11ba76ced249
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Date deposited: 01 Oct 1999
Last modified: 08 Jan 2022 05:40
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Contributors
Author:
J F W Schiz
Author:
J M Bonar
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