TEM structural studies of polysilicon emitter bipolar materials and devices: increased interfacial oxide break-up and polysilicon regrowth and decreased emitter resistance by fluorine implantation
Marsh, C D, Booker, G R, Moiseiwitsch, N E, Schiz, J F W and Ashburn, P (1998) TEM structural studies of polysilicon emitter bipolar materials and devices: increased interfacial oxide break-up and polysilicon regrowth and decreased emitter resistance by fluorine implantation. Proceedings of Materials Research Society Spring Meeting , 195-198.
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| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 250916 |
| Date Deposited: | 01 Oct 1999 |
| Last Modified: | 02 Mar 2012 12:57 |
| Contributors: | Marsh, C D (Author) Booker, G R (Author) Moiseiwitsch, N E (Author) Schiz, J F W (Author) Ashburn, P (Author) |
| Date: | 1998 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/250916 |
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