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Assessment of a methanol last interface treatment for use in polysilicon emitter transistor fabrication

Assessment of a methanol last interface treatment for use in polysilicon emitter transistor fabrication
Assessment of a methanol last interface treatment for use in polysilicon emitter transistor fabrication
A methanol-last chemical treatment is investigated for application as an ultra-clean polysilicon/silicon interface in polysilicon emitter bipolar transistors. It is shown that the interfacial oxide thicknesses after methanol-last and HF treatments are approximately 1-2 and 6Å respectively. Similarly the carbon concentrations at the interface after the two treatments are 6x1012cm-2 and 5x1014cm-2 respectively. The interfacial layer produced after the methanol-last treatment is thin enough to allow complete (100%) epitaxial regrowth of the polysilicon to take place after an anneal of just 120s at 950°C. In contrast, only 0.5% of the polysilicon regrew for an HF-treated control sample even after an anneal of 300s at 950°C.
91-93
Moiseiwitsch, N E
3cca82f7-300c-4ef9-9298-f68d784d3735
Marsh, C D
b5482357-2e75-49f8-8217-72e1fde37c9f
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9
Moiseiwitsch, N E
3cca82f7-300c-4ef9-9298-f68d784d3735
Marsh, C D
b5482357-2e75-49f8-8217-72e1fde37c9f
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9

Moiseiwitsch, N E, Marsh, C D, Ashburn, P and Booker, G R (1998) Assessment of a methanol last interface treatment for use in polysilicon emitter transistor fabrication. Electrochemical and Solid-State Letters, 1, 91-93.

Record type: Article

Abstract

A methanol-last chemical treatment is investigated for application as an ultra-clean polysilicon/silicon interface in polysilicon emitter bipolar transistors. It is shown that the interfacial oxide thicknesses after methanol-last and HF treatments are approximately 1-2 and 6Å respectively. Similarly the carbon concentrations at the interface after the two treatments are 6x1012cm-2 and 5x1014cm-2 respectively. The interfacial layer produced after the methanol-last treatment is thin enough to allow complete (100%) epitaxial regrowth of the polysilicon to take place after an anneal of just 120s at 950°C. In contrast, only 0.5% of the polysilicon regrew for an HF-treated control sample even after an anneal of 300s at 950°C.

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More information

Published date: 1998
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250921
URI: http://eprints.soton.ac.uk/id/eprint/250921
PURE UUID: 133b19c7-d861-43ae-903b-06bc35239360

Catalogue record

Date deposited: 02 Apr 2001
Last modified: 10 Dec 2021 20:19

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Contributors

Author: N E Moiseiwitsch
Author: C D Marsh
Author: P Ashburn
Author: G R Booker

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