Assessment of a methanol last interface treatment for use in polysilicon emitter transistor fabrication
Moiseiwitsch, N E, Marsh, C D, Ashburn, P and Booker, G R (1998) Assessment of a methanol last interface treatment for use in polysilicon emitter transistor fabrication. Electrochemical and Solid State Letters, 1, 91-93.
Download
Full text not available from this repository.
Description/Abstract
A methanol-last chemical treatment is investigated for application as an ultra-clean polysilicon/silicon interface in polysilicon emitter bipolar transistors. It is shown that the interfacial oxide thicknesses after methanol-last and HF treatments are approximately 1-2 and 6Å respectively. Similarly the carbon concentrations at the interface after the two treatments are 6x1012cm-2 and 5x1014cm-2 respectively. The interfacial layer produced after the methanol-last treatment is thin enough to allow complete (100%) epitaxial regrowth of the polysilicon to take place after an anneal of just 120s at 950°C. In contrast, only 0.5% of the polysilicon regrew for an HF-treated control sample even after an anneal of 300s at 950°C.
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 250921 |
| Date Deposited: | 02 Apr 2001 |
| Last Modified: | 02 Mar 2012 13:39 |
| Contributors: | Moiseiwitsch, N E (Author) Marsh, C D (Author) Ashburn, P (Author) Booker, G R (Author) |
| Date: | 1998 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/250921 |
Actions (login required)
 |
View Item |
