Assessment of a methanol last interface treatment for use in polysilicon emitter transistor fabrication
Moiseiwitsch, N E, Marsh, C D, Ashburn, P and Booker, G R (1998) Assessment of a methanol last interface treatment for use in polysilicon emitter transistor fabrication. Electrochemical and Solid State Letters, 1, 91-93.
Full text not available from this repository.
A methanol-last chemical treatment is investigated for application as an ultra-clean polysilicon/silicon interface in polysilicon emitter bipolar transistors. It is shown that the interfacial oxide thicknesses after methanol-last and HF treatments are approximately 1-2 and 6Å respectively. Similarly the carbon concentrations at the interface after the two treatments are 6x1012cm-2 and 5x1014cm-2 respectively. The interfacial layer produced after the methanol-last treatment is thin enough to allow complete (100%) epitaxial regrowth of the polysilicon to take place after an anneal of just 120s at 950°C. In contrast, only 0.5% of the polysilicon regrew for an HF-treated control sample even after an anneal of 300s at 950°C.
|Divisions:||Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
|Date Deposited:||02 Apr 2001|
|Last Modified:||02 Mar 2012 13:39|
|Contributors:||Moiseiwitsch, N E (Author)
Marsh, C D (Author)
Ashburn, P (Author)
Booker, G R (Author)
|Further Information:||Google Scholar|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
Actions (login required)