Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors
Anteney, I, Lippert, G, Ashburn, P, Osten, H J and Parker, G J (1997) Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors. Proceedings of 5th IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications , 55-60.
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| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| ISBNs: | 078034135 |
| Divisions: | Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO |
| Item ID: | 250922 |
| Date Deposited: | 01 Oct 1999 |
| Last Modified: | 02 Mar 2012 12:57 |
| Contributors: | Anteney, I (Author) Lippert, G (Author) Ashburn, P (Author) Osten, H J (Author) Parker, G J (Author) |
| Date: | 1997 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 0 |
| URI: | http://eprints.soton.ac.uk/id/eprint/250922 |
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