A novel self-aligned SiGe HBT structure using selective and non-selective epitaxy
Schiz, J, Bonar, J M and Ashburn, P (1997) A novel self-aligned SiGe HBT structure using selective and non-selective epitaxy. Proceedings of 5th IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications , 255-260.
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| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| ISBNs: | 078034135 |
| Divisions: | Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO |
| Item ID: | 250924 |
| Date Deposited: | 01 Oct 1999 |
| Last Modified: | 02 Mar 2012 14:01 |
| Contributors: | Schiz, J (Author) Bonar, J M (Author) Ashburn, P (Author) |
| Date: | 1997 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 0 |
| URI: | http://eprints.soton.ac.uk/id/eprint/250924 |
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