A novel self-aligned SiGe HBT structure using selective and non-selective epitaxy


Schiz, J, Bonar, J M and Ashburn, P (1997) A novel self-aligned SiGe HBT structure using selective and non-selective epitaxy. Proceedings of 5th IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications , 255-260.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
ISBNs: 078034135
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 250924
Date Deposited: 01 Oct 1999
Last Modified: 27 Mar 2014 19:52
Further Information:Google Scholar
ISI Citation Count:0
URI: http://eprints.soton.ac.uk/id/eprint/250924

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