The design and characterisation of a SiGe I2L technology
Moiseiwitsch, N E, Kennedy, G P, Wainwright, S, Ashburn, P and Hall, S (1997) The design and characterisation of a SiGe I2L technology. Proceedings of European Solid State Device Research Conference , 348-351.
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| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| ISBNs: | 2863322214 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 250925 |
| Date Deposited: | 01 Oct 1999 |
| Last Modified: | 02 Mar 2012 14:01 |
| Contributors: | Moiseiwitsch, N E (Author) Kennedy, G P (Author) Wainwright, S (Author) Ashburn, P (Author) Hall, S (Author) |
| Date: | 1997 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/250925 |
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