Characterisation of the effects of transient enhanced diffusion in SiGe HBTs by a comparison of measured and 2D simulated device characteristics
Hashim, M D R, Lever, R F and Ashburn, P (1997) Characterisation of the effects of transient enhanced diffusion in SiGe HBTs by a comparison of measured and 2D simulated device characteristics. Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting , 96-99.
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| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| ISBNs: | 0780339169 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 250926 |
| Date Deposited: | 01 Oct 1999 |
| Last Modified: | 02 Mar 2012 12:57 |
| Contributors: | Hashim, M D R (Author) Lever, R F (Author) Ashburn, P (Author) |
| Date: | 1997 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/250926 |
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