Characterisation of the effects of transient enhanced diffusion in SiGe HBTs by a comparison of measured and 2D simulated device characteristics


Hashim, M D R, Lever, R F and Ashburn, P (1997) Characterisation of the effects of transient enhanced diffusion in SiGe HBTs by a comparison of measured and 2D simulated device characteristics. Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting , 96-99.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
ISBNs: 0780339169
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 250926
Accepted Date and Publication Date:
Status
1997Published
Date Deposited: 01 Oct 1999
Last Modified: 31 Mar 2016 13:51
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250926

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