Improved epitaxial quality following etch damage removal on plasma etched silicon surfaces


Bonar, J M, Schiz, J and Ashburn, P (1997) Improved epitaxial quality following etch damage removal on plasma etched silicon surfaces. Proceedings of Microscopy of Semiconducting Materials Conference , 407-410.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
ISBNs: 0750304642
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
Item ID: 250927
Date Deposited: 01 Oct 1999
Last Modified: 02 Mar 2012 14:01
Contributors: Bonar, J M (Author)
Schiz, J (Author)
Ashburn, P (Author)
Date: 1997
Status: Published
Further Information:Google Scholar
ISI Citation Count:1
URI: http://eprints.soton.ac.uk/id/eprint/250927

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