LPCVD epitaxy of Si and SiGe and incorporation of these materials in advanced bipolar devices


Parker, G J, Ashburn, P and Bonar, J M (1997) LPCVD epitaxy of Si and SiGe and incorporation of these materials in advanced bipolar devices. Proceedings of 7th International Symposium on Silicon Molecular Beam Epitaxy , 123-124.

Download

Full text not available from this repository.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 250928
Accepted Date and Publication Date:
Status
1997Published
Date Deposited: 01 Oct 1999
Last Modified: 31 Mar 2016 13:51
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250928

Actions (login required)

View Item View Item