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LPCVD epitaxy of Si and SiGe and incorporation of these materials in advanced bipolar devices

LPCVD epitaxy of Si and SiGe and incorporation of these materials in advanced bipolar devices
LPCVD epitaxy of Si and SiGe and incorporation of these materials in advanced bipolar devices
123-124
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Bonar, J M
5ee6b25a-3e67-4a6d-9854-5e1e079d50b8

Parker, G J, Ashburn, P and Bonar, J M (1997) LPCVD epitaxy of Si and SiGe and incorporation of these materials in advanced bipolar devices. Proceedings of 7th International Symposium on Silicon Molecular Beam Epitaxy. pp. 123-124 .

Record type: Conference or Workshop Item (Other)

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More information

Published date: 1997
Venue - Dates: Proceedings of 7th International Symposium on Silicon Molecular Beam Epitaxy, 1997-01-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 250928
URI: http://eprints.soton.ac.uk/id/eprint/250928
PURE UUID: 05507a22-993c-4ee1-8222-c6ef7f97ec09

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Date deposited: 01 Oct 1999
Last modified: 10 Dec 2021 20:19

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Contributors

Author: G J Parker
Author: P Ashburn
Author: J M Bonar

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