LPCVD epitaxy of Si and SiGe and incorporation of these materials in advanced bipolar devices
Parker, G J, Ashburn, P and Bonar, J M (1997) LPCVD epitaxy of Si and SiGe and incorporation of these materials in advanced bipolar devices. Proceedings of 7th International Symposium on Silicon Molecular Beam Epitaxy , 123-124.
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| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 250928 |
| Date Deposited: | 01 Oct 1999 |
| Last Modified: | 02 Mar 2012 13:17 |
| Contributors: | Parker, G J (Author) Ashburn, P (Author) Bonar, J M (Author) |
| Date: | 1997 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/250928 |
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