Determination of bandgap narrowing and parasitic energy barriers in SiGe HBTs integrated in a bipolar technology


Tron, B Le, Hashim, M D R, Ashburn, P, Mouis, M, Chantre, A and Vincent, G (1997) Determination of bandgap narrowing and parasitic energy barriers in SiGe HBTs integrated in a bipolar technology. IEEE Transactions on Electron Devices, 44, 715-722.

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 250930
Date Deposited: 06 Jan 2004
Last Modified: 27 Mar 2014 19:52
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250930

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