Determination of bandgap narrowing and parasitic energy barriers in SiGe HBTs integrated in a bipolar technology

Tron, B Le, Hashim, M D R, Ashburn, P, Mouis, M, Chantre, A and Vincent, G (1997) Determination of bandgap narrowing and parasitic energy barriers in SiGe HBTs integrated in a bipolar technology. IEEE Transactions on Electron Devices, 44, 715-722.

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Item Type:	Article
Divisions:	Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID:	250930
Date Deposited:	06 Jan 2004
Last Modified:	02 Mar 2012 11:37
Contributors:	Tron, B Le (Author) Hashim, M D R (Author) Ashburn, P (Author) Mouis, M (Author) Chantre, A (Author) Vincent, G (Author)
Date:	1997
Status:	Published
Further Information:	Google Scholar
URI:	http://eprints.soton.ac.uk/id/eprint/250930

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