Increased current gain and reduced emitter resistance in F-implanted low thermal budget polysilicon emitters for SiGe HBTs


Moiseiwitsch, N E, Schiz, J F W, Marsh, C D, Ashburn, P and Booker, G R (1996) Increased current gain and reduced emitter resistance in F-implanted low thermal budget polysilicon emitters for SiGe HBTs. UNSPECIFIED IEEE, 177-180.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 250931
Date Deposited: 08 Nov 1999
Last Modified: 27 Mar 2014 19:52
Further Information:Google Scholar
ISI Citation Count:0
URI: http://eprints.soton.ac.uk/id/eprint/250931

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