Increased current gain and reduced emitter resistance in F-implanted low thermal budget polysilicon emitters for SiGe HBTs
Moiseiwitsch, N E, Schiz, J F W, Marsh, C D, Ashburn, P and Booker, G R (1996) Increased current gain and reduced emitter resistance in F-implanted low thermal budget polysilicon emitters for SiGe HBTs. UNSPECIFIED IEEE, 177-180.
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| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Divisions: | Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO |
| Item ID: | 250931 |
| Date Deposited: | 08 Nov 1999 |
| Last Modified: | 02 Mar 2012 13:39 |
| Contributors: | Moiseiwitsch, N E (Author) Schiz, J F W (Author) Marsh, C D (Author) Ashburn, P (Author) Booker, G R (Author) |
| Date: | 1996 |
| Status: | Published |
| Publisher: | IEEE |
| Further Information: | Google Scholar |
| ISI Citation Count: | 0 |
| URI: | http://eprints.soton.ac.uk/id/eprint/250931 |
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