Increased current gain and reduced emitter resistance in F-implanted low thermal budget polysilicon emitters for SiGe HBTs


Moiseiwitsch, N E, Schiz, J F W, Marsh, C D, Ashburn, P and Booker, G R (1996) Increased current gain and reduced emitter resistance in F-implanted low thermal budget polysilicon emitters for SiGe HBTs. UNSPECIFIED IEEE, 177-180.

Download

Full text not available from this repository.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 250931
Date :
Date Event
1996Published
Date Deposited: 08 Nov 1999
Last Modified: 31 Mar 2016 13:51
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250931

Actions (login required)

View Item View Item