Temperature dependence of the collector current of bipolar transistors with epitaxial and ion implanted bases
Ashburn, P, Boussetta, H, Hashim, M D R, Chantre, A, Mouis, M, Vincent, G and Parker, G J (1996) Temperature dependence of the collector current of bipolar transistors with epitaxial and ion implanted bases. IEEE Transactions on Electron Devices, 43, 774-783.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 250933 |
| Date Deposited: | 06 Jan 2004 |
| Last Modified: | 02 Mar 2012 12:57 |
| Contributors: | Ashburn, P (Author) Boussetta, H (Author) Hashim, M D R (Author) Chantre, A (Author) Mouis, M (Author) Vincent, G (Author) Parker, G J (Author) |
| Date: | 1996 |
| Status: | Published |
| Publisher: | IEEE |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/250933 |
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