Application of silane only selective epitaxy to the fabrication of fully self-aligned silicon bipolar transistors
Boussetta, H, Gregory, H J, Bonar, J M, Ashburn, P and Parker, G J (1996) Application of silane only selective epitaxy to the fabrication of fully self-aligned silicon bipolar transistors. Proceedings of European Solid State Device Research Conference , 795-798.
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| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 250934 |
| Date Deposited: | 01 Oct 1999 |
| Last Modified: | 02 Mar 2012 11:56 |
| Contributors: | Boussetta, H (Author) Gregory, H J (Author) Bonar, J M (Author) Ashburn, P (Author) Parker, G J (Author) |
| Date: | 1996 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/250934 |
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