Application of silane only selective epitaxy to the fabrication of fully self-aligned silicon bipolar transistors


Boussetta, H, Gregory, H J, Bonar, J M, Ashburn, P and Parker, G J (1996) Application of silane only selective epitaxy to the fabrication of fully self-aligned silicon bipolar transistors. Proceedings of European Solid State Device Research Conference , 795-798.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 250934
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Date Deposited: 01 Oct 1999
Last Modified: 31 Mar 2016 13:51
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250934

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