Expitaxial regrowth of As doped polysilicon at 850 Degrees C induced by fluorine and a pre-anneal
Marsh, C D, Moiseiwitsch, N E, Booker, G R and Ashburn, P (1995) Expitaxial regrowth of As doped polysilicon at 850 Degrees C induced by fluorine and a pre-anneal. , 20-23.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 250938 |
| Date Deposited: | 04 Oct 1999 |
| Last Modified: | 02 Mar 2012 12:38 |
| Contributors: | Marsh, C D (Author) Moiseiwitsch, N E (Author) Booker, G R (Author) Ashburn, P (Author) |
| Date: | 1995 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/250938 |
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