Expitaxial regrowth of As doped polysilicon at 850 Degrees C induced by fluorine and a pre-anneal


Marsh, C D, Moiseiwitsch, N E, Booker, G R and Ashburn, P (1995) Expitaxial regrowth of As doped polysilicon at 850 Degrees C induced by fluorine and a pre-anneal. , 20-23.

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Item Type: Other
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 250938
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1995Published
Date Deposited: 04 Oct 1999
Last Modified: 31 Mar 2016 13:51
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250938

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