Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors


Mouis, M, Gregory, H J, Denorme, S, Mathiot, D, Ashburn, P, Robbins, D J and Glasper, J L (1995) Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors. Microelectronics Journal, 26, 255-259.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 250940
Date Deposited: 04 Oct 1999
Last Modified: 27 Mar 2014 19:52
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250940

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