Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors
Mouis, M, Gregory, H J, Denorme, S, Mathiot, D, Ashburn, P, Robbins, D J and Glasper, J L (1995) Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors. Microelectronics Journal, 26, 255-259.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 250940 |
| Date Deposited: | 04 Oct 1999 |
| Last Modified: | 02 Mar 2012 12:57 |
| Contributors: | Mouis, M (Author) Gregory, H J (Author) Denorme, S (Author) Mathiot, D (Author) Ashburn, P (Author) Robbins, D J (Author) Glasper, J L (Author) |
| Date: | 1995 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/250940 |
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