Analysis and modelling of the base currents of Si/SiGe heterojunction bipolar transistors fabricated in high and low oxygen content material


Shafi, Z A, Ashburn, P, Post, I R C, Robbins, D J, Leong, W Y, Gibbins, C J and Nigrin, S (1995) Analysis and modelling of the base currents of Si/SiGe heterojunction bipolar transistors fabricated in high and low oxygen content material. Journal of Applied Physics, 78

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 250942
Date Deposited: 04 Oct 1999
Last Modified: 27 Mar 2014 19:52
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250942

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