Analysis and modelling of the base currents of Si/SiGe heterojunction bipolar transistors fabricated in high and low oxygen content material
Shafi, Z A, Ashburn, P, Post, I R C, Robbins, D J, Leong, W Y, Gibbins, C J and Nigrin, S (1995) Analysis and modelling of the base currents of Si/SiGe heterojunction bipolar transistors fabricated in high and low oxygen content material. Journal of Applied Physics, 78
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 250942 |
| Date Deposited: | 04 Oct 1999 |
| Last Modified: | 02 Mar 2012 12:57 |
| Contributors: | Shafi, Z A (Author) Ashburn, P (Author) Post, I R C (Author) Robbins, D J (Author) Leong, W Y (Author) Gibbins, C J (Author) Nigrin, S (Author) |
| Date: | 1995 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/250942 |
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