Epitaxial regrowth of n+ polycrystalline silicon at 850 ºC induced by fluorine implantation

Moiseiwitsch, N.E., Marsh, C., Ashburn, P. and Booker, G.R. (1995) Epitaxial regrowth of n+ polycrystalline silicon at 850 ºC induced by fluorine implantation. Applied Physics Letters, 66 (15). (doi:10.1063/1.113276).

Record type: Article

Abstract

A study is made of fluorine implantation into n+ polycrystalline silicon (polysilicon), with the aim of producing completely epitaxially regrown polysilicon emitters at lower temperatures. Polysilicon-on-silicon sheet resistance measurements are made to obtain an indication of the amount of polysilicon regrowth, and cross-section transmission electron microscope examinations to directly observe the regrowth. Samples given a fluorine implant, followed by a 1000 °C/10 min preanneal, show 50% epitaxial regrowth of the polysilicon after an emitter drive-in of only 850 °C/ 30 min. In contrast, in the absence of fluorine, negligible regrowth occurs even after an emitter drive-in of 850 °C/480 min.

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