Epitaxial regrowth of n+ polycrystalline silicon at 850 Deg C induced by fluorine implantation


Moiseiwitsch, N E, Marsh, C, Ashburn, P and Booker, G R (1995) Epitaxial regrowth of n+ polycrystalline silicon at 850 Deg C induced by fluorine implantation. Applied Physics Letters, 66, 1918-1920.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 250944
Date Deposited: 04 Oct 1999
Last Modified: 27 Mar 2014 19:52
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250944

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