Epitaxial regrowth of n+ polycrystalline silicon at 850 Deg C induced by fluorine implantation
Moiseiwitsch, N E, Marsh, C, Ashburn, P and Booker, G R (1995) Epitaxial regrowth of n+ polycrystalline silicon at 850 Deg C induced by fluorine implantation. Applied Physics Letters, 66, 1918-1920.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 250944 |
| Date Deposited: | 04 Oct 1999 |
| Last Modified: | 02 Mar 2012 14:01 |
| Contributors: | Moiseiwitsch, N E (Author) Marsh, C (Author) Ashburn, P (Author) Booker, G R (Author) |
| Date: | 1995 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/250944 |
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