Theoretical and experimental study of high energy implanted collectors for bipolar transistors in BiCMOS technology
Marty, A, Nouailhat, A and Ashburn, P (1994) Theoretical and experimental study of high energy implanted collectors for bipolar transistors in BiCMOS technology. Japanese Journal of Applied Physics, 33, 3844-3852.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 250946 |
| Date Deposited: | 04 Oct 1999 |
| Last Modified: | 02 Mar 2012 11:56 |
| Contributors: | Marty, A (Author) Nouailhat, A (Author) Ashburn, P (Author) |
| Date: | 1994 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/250946 |
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