Theoretical and experimental study of high energy implanted collectors for bipolar transistors in BiCMOS technology


Marty, A, Nouailhat, A and Ashburn, P (1994) Theoretical and experimental study of high energy implanted collectors for bipolar transistors in BiCMOS technology. Japanese Journal of Applied Physics, 33, 3844-3852.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 250946
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1994Published
Date Deposited: 04 Oct 1999
Last Modified: 31 Mar 2016 13:51
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250946

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