Temperature dependence of the current gain of Si/SiGe for device applications
Ashburn, P, Nouailhat, A, Hashim, M D R, Parker, G J, Mouis, M and Robbins, D J (1994) Temperature dependence of the current gain of Si/SiGe for device applications. , 477-480.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 250947 |
| Date Deposited: | 04 Oct 1999 |
| Last Modified: | 02 Mar 2012 13:17 |
| Contributors: | Ashburn, P (Author) Nouailhat, A (Author) Hashim, M D R (Author) Parker, G J (Author) Mouis, M (Author) Robbins, D J (Author) |
| Date: | 1994 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/250947 |
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