Temperature dependence of the current gain of Si/SiGe for device applications


Ashburn, P, Nouailhat, A, Hashim, M D R, Parker, G J, Mouis, M and Robbins, D J (1994) Temperature dependence of the current gain of Si/SiGe for device applications. , 477-480.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 250947
Date Deposited: 04 Oct 1999
Last Modified: 27 Mar 2014 19:52
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250947

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