Interfacial oxide break-up in npn polysilicon emitter bipolar transistors by fluorine implantation


Moiseiwitsch, N E and Ashburn, P (1994) Interfacial oxide break-up in npn polysilicon emitter bipolar transistors by fluorine implantation. , 55-58.

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Item Type: Other
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 250948
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1994Published
Date Deposited: 04 Oct 1999
Last Modified: 31 Mar 2016 13:51
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250948

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