Interfacial oxide break-up in npn polysilicon emitter bipolar transistors by fluorine implantation
Moiseiwitsch, N E and Ashburn, P (1994) Interfacial oxide break-up in npn polysilicon emitter bipolar transistors by fluorine implantation. , 55-58.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 250948 |
| Date Deposited: | 04 Oct 1999 |
| Last Modified: | 02 Mar 2012 12:18 |
| Contributors: | Moiseiwitsch, N E (Author) Ashburn, P (Author) |
| Date: | 1994 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/250948 |
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