Measurement of the bandgap narrowing in the base of Si homojunction and Si/SiGe heterojunction bipolar transistors from the temperature dependence of the collector current: Supplement C6
Ashburn, P, Nouailhat, A and Chantre, A (1994) Measurement of the bandgap narrowing in the base of Si homojunction and Si/SiGe heterojunction bipolar transistors from the temperature dependence of the collector current: Supplement C6. Journal de Physique, 4, 123-126.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 250949 |
| Date Deposited: | 04 Oct 1999 |
| Last Modified: | 02 Mar 2012 14:01 |
| Contributors: | Ashburn, P (Author) Nouailhat, A (Author) Chantre, A (Author) |
| Date: | 1994 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/250949 |
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