An investigation of the inconsistency in barrier heights for pnp and npn polysilicon emitter bipolar transistors using a new tunneling model


Post, I R C, Ashburn, P and Nouailhat, A (1994) An investigation of the inconsistency in barrier heights for pnp and npn polysilicon emitter bipolar transistors using a new tunneling model. Japanese Journal of Applied Physics, 1275-1284.

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Item Type: Other
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 250952
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1994Published
Date Deposited: 04 Oct 1999
Last Modified: 31 Mar 2016 13:51
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250952

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