An investigation of the inconsistency in barrier heights for pnp and npn polysilicon emitter bipolar transistors using a new tunneling model
Post, I R C, Ashburn, P and Nouailhat, A (1994) An investigation of the inconsistency in barrier heights for pnp and npn polysilicon emitter bipolar transistors using a new tunneling model. Japanese Journal of Applied Physics, 1275-1284.
Download
Full text not available from this repository.
| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 250952 |
| Date Deposited: | 04 Oct 1999 |
| Last Modified: | 02 Mar 2012 12:38 |
| Contributors: | Post, I R C (Author) Ashburn, P (Author) Nouailhat, A (Author) |
| Date: | 1994 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/250952 |
Actions (login required)
 |
View Item |
