Drift mobility measurement in thin epitaxial semiconductor layers using time-of-flight techniques


Evans, A G R and Robson, P N (1974) Drift mobility measurement in thin epitaxial semiconductor layers using time-of-flight techniques. Solid State Electron, 17, 805-812.

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Item Type: Other
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 250985
Date Deposited: 08 Oct 1999
Last Modified: 02 Mar 2012 14:01
Contributors: Evans, A G R (Author)
Robson, P N (Author)
Date: 1974
Status: Published
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250985

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