Threshold shift of NMOS transistors due to high energy source/drain implantation


Sabine, K A, Amaratunga, G A J and Evans, A G R (1985) Threshold shift of NMOS transistors due to high energy source/drain implantation. IEEE Proc.I, 133, p, (3), 163-166.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 250992
Date Deposited: 08 Oct 1999
Last Modified: 27 Mar 2014 19:52
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250992

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