Sabine, K A, Amaratunga, G A J and Evans, A G R (1985) Threshold shift of NMOS transistors due to high energy source/drain implantation.
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Published date: 1985
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 250992
URI: http://eprints.soton.ac.uk/id/eprint/250992
PURE UUID: 350fa030-3672-4e33-9809-e3e34ebd781c
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Date deposited: 08 Oct 1999
Last modified: 10 Dec 2021 20:19
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Contributors
Author:
K A Sabine
Author:
G A J Amaratunga
Author:
A G R Evans
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