Threshold shift of NMOS transistors due to high energy source/drain implantation
Sabine, K A, Amaratunga, G A J and Evans, A G R (1985) Threshold shift of NMOS transistors due to high energy source/drain implantation. IEEE Proc.I, 133, p, (3), 163-166.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 250992 |
| Date Deposited: | 08 Oct 1999 |
| Last Modified: | 02 Mar 2012 14:01 |
| Contributors: | Sabine, K A (Author) Amaratunga, G A J (Author) Evans, A G R (Author) |
| Date: | 1985 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/250992 |
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