Diffusion of Boron in heavily doped n-and p-type silicon
Willoughby, A F W, Evans, A G R, Champ, P, Yallop, K J and Godfrey, D J (1986) Diffusion of Boron in heavily doped n-and p-type silicon. J.Appl.Phys, 59, ((7)), 2392-2397.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 250997 |
| Date Deposited: | 08 Oct 1999 |
| Last Modified: | 02 Mar 2012 13:39 |
| Contributors: | Willoughby, A F W (Author) Evans, A G R (Author) Champ, P (Author) Yallop, K J (Author) Godfrey, D J (Author) |
| Date: | 1986 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/250997 |
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