Diffusion of Boron in heavily doped n-and p-type silicon


Willoughby, A F W, Evans, A G R, Champ, P, Yallop, K J and Godfrey, D J (1986) Diffusion of Boron in heavily doped n-and p-type silicon. J.Appl.Phys, 59, ((7)), 2392-2397.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 250997
Date Deposited: 08 Oct 1999
Last Modified: 27 Mar 2014 19:52
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/250997

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